msd160 msd160-rev 1 www.microsemi.com dec, 2009 1/4 module type type v rrm v rsm msd160 ? 08 msd160 ? 12 msd160 ? 16 msd160 ? 18 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v maximum ratings symbol conditions values units i d tc=100 160 a i fsm t=10ms tv j =45 1800 a i 2 t t=10ms tv j =45 16200 a 2 s v isol a.c.50hz;r.m.s.;1min 3000 v t vj -40 to 150 t stg -40 to 125 mt to terminals(m6) 515% nm ms to heatsink(m6) 515% nm weight module 230 g thermal characteristics symbol conditions values units r th(j-c) per diode 0.65 / w r th(c-s) module 0.03 / w electrical characteristics circuit glass passivated three phase rectifier bridge v rrm 800 to 1800v i d 160 amp features y three phase bridge rectifier y blocking voltage: 800 to 1800v y heat transfer through aluminum oxide dcb ceramic isolated metal baseplate y glass passivated chip applications y three phase rectifiers for power supplies y rectifiers for dc motor field supplies y battery charger rectifiers y in p ut rectifiers for variable fre q uenc y drives - + ~ ~ ~ msd symbol conditions values units v fm t=25 i fm =300a 1.65 v i rd t vj =25 v rd =v rrm t vj =150 v rd =v rrm 0.5 6 ma ma
msd160 msd160-rev 1 www.microsemi.com dec, 2009 2/4 performance curves fig1. forward characteristics fig3. transient thermal impedance fi g 2. power dissi p ation fig4. max non-repetitive forward surge current fig5.forward current derating curve 0 tc 50 100 150 c 250 a 200 150 0 100 50 if 400 a 300 200 100 0 0 vf 0.5 1.0 1.5 2.0 v 450 w 300 150 p vtot 0 0.001 0.01 0.1 1 10 100 s 1 10 cycles 100 z th(j- c ) typ. 25 125 2250 15 00 750 0 3000 a 0 i d 20 40 60 80 100 120 140 160 a i d 50hz 0.5 0 1.0 / w
msd160 msd160-rev 1 www.microsemi.com dec, 2009 3/4 package outline information case-m3 dimensions in mm
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